| PART |
Description |
Maker |
| RM1200DB-34S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ750R65KE3T |
high insulated module
|
Infineon Technologies AG
|
| FZ600R65KE3 |
high insulated module
|
Infineon Technologies AG
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| FM400TU-2A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| UFB60FA40P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB60FA20P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB60FA40P10 |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB80FA20 |
Insulated Ultrafast Rectifier Module, 80 A
|
Vishay Siliconix
|
| UFB280FA40 |
Insulated Ultrafast Rectifier Module, 280 A
|
Vishay Siliconix
|
| UFB200CB40P |
Not Insulated SOT-227 Power Module
|
Vishay Siliconix
|
